MPGJ04R017 MOSFET. Datasheet pdf. Equivalent
Type Designator: MPGJ04R017
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 200 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 73 nC
trⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 1520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN5X6
MPGJ04R017 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPGJ04R017 Datasheet (PDF)
..1. Size:2097K cn marching-power
mpgj04r017.pdf
mpgj04r017.pdf
MPGJ04R017DATASHEET40V 2.0mohm N-channel SGT MOSFETDescription:-This N channel SGT MOSFET has been designed to low on-state resistance andmaintain superior switching performance, especial for high efficiency powermanagement applications.Features: Applications: Low RDS(ON) Battery Management System Motor Drivers RoHS compliant (Note 1) DC-DC Converter
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
