MPGJ04R017 Specs and Replacement

Type Designator: MPGJ04R017

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.2 nS

Cossⓘ - Output Capacitance: 1520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: DFN5X6

MPGJ04R017 substitution

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MPGJ04R017 datasheet

 ..1. Size:2097K  cn marching-power
 mpgj04r017.pdf pdf_icon

MPGJ04R017

MPGJ04R017 DATASHEET 40V 2.0mohm N-channel SGT MOSFET Description - This N channel SGT MOSFET has been designed to low on-state resistance and maintain superior switching performance, especial for high efficiency power management applications. Features Applications Low RDS(ON) Battery Management System Motor Drivers RoHS compliant (Note 1) DC-DC Converter ... See More ⇒

Detailed specifications: BLS70R600-D, BLS70R600-P, BLS70R600-U, BLS70R900-D, AMPCW120R30CV, AMPCW120R40CU, MPGC15R063, MPGC20R170, 8N60, MPGJ10R7, MPGJ80R040, MPGP06R030H, MPGP10R033, MPGW20R170, MPSA60M082, MPSW60M082, MPSA60M160

Keywords - MPGJ04R017 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.