All MOSFET. MPGJ04R017 Datasheet

 

MPGJ04R017 Datasheet and Replacement


   Type Designator: MPGJ04R017
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 200 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.2 nS
   Cossⓘ - Output Capacitance: 1520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: DFN5X6
 

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MPGJ04R017 Datasheet (PDF)

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MPGJ04R017

MPGJ04R017DATASHEET40V 2.0mohm N-channel SGT MOSFETDescription:-This N channel SGT MOSFET has been designed to low on-state resistance andmaintain superior switching performance, especial for high efficiency powermanagement applications.Features: Applications: Low RDS(ON) Battery Management System Motor Drivers RoHS compliant (Note 1) DC-DC Converter

Datasheet: BLS70R600-D , BLS70R600-P , BLS70R600-U , BLS70R900-D , AMPCW120R30CV , AMPCW120R40CU , MPGC15R063 , MPGC20R170 , K2611 , MPGJ10R7 , MPGJ80R040 , MPGP06R030H , MPGP10R033 , MPGW20R170 , MPSA60M082 , MPSW60M082 , MPSA60M160 .

History: BUK964R2-80E | CS9N90F | BUK9E1R6-30E | SI7888DP | SWN8N80K | MMN8818N | AOK160A60

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