MPGJ10R7 Specs and Replacement

Type Designator: MPGJ10R7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN5X6

MPGJ10R7 substitution

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MPGJ10R7 datasheet

 ..1. Size:2797K  cn marching-power
 mpgj10r7.pdf pdf_icon

MPGJ10R7

MPGJ 10R7 Features BV DSS=100V, I D =94A @ RDS(on) m (Max) GS=10V 6.5 V RDS(on) @ 9 m (Max) V GS=4.5V N-Channel 5V Logic Level Control Enhancement mode DFN5*6 Very low on-resistance RDS(on) @ VGS=4.5V 100% Avalanche test Device Marking and Package Information Ordering code Package Marking MPGJ10R7 MPGJ10R7 DFN5*6 Maximum rati... See More ⇒

Detailed specifications: BLS70R600-P, BLS70R600-U, BLS70R900-D, AMPCW120R30CV, AMPCW120R40CU, MPGC15R063, MPGC20R170, MPGJ04R017, P60NF06, MPGJ80R040, MPGP06R030H, MPGP10R033, MPGW20R170, MPSA60M082, MPSW60M082, MPSA60M160, MPSP60M160

Keywords - MPGJ10R7 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.