MPGJ10R7 MOSFET. Datasheet pdf. Equivalent
Type Designator: MPGJ10R7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
|Id|ⓘ - Maximum Drain Current: 94 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6
MPGJ10R7 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPGJ10R7 Datasheet (PDF)
..1. Size:2797K cn marching-power
mpgj10r7.pdf
mpgj10r7.pdf
MPGJ 10R7FeaturesBVDSS=100V, ID =94A @ RDS(on) m (Max)GS=10V :6.5 VRDS(on) @ :9 m (Max) VGS=4.5V N-Channel5V Logic Level Control Enhancement mode DFN5*6 Very low on-resistance RDS(on) @ VGS=4.5V100% Avalanche test Device Marking and Package InformationOrdering code Package MarkingMPGJ10R7MPGJ10R7 DFN5*6Maximum rati
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
