All MOSFET. MPGJ10R7 Datasheet

 

MPGJ10R7 Datasheet and Replacement


   Type Designator: MPGJ10R7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 115 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: DFN5X6
 

 MPGJ10R7 substitution

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MPGJ10R7 Datasheet (PDF)

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MPGJ10R7

MPGJ 10R7FeaturesBVDSS=100V, ID =94A @ RDS(on) m (Max)GS=10V :6.5 VRDS(on) @ :9 m (Max) VGS=4.5V N-Channel5V Logic Level Control Enhancement mode DFN5*6 Very low on-resistance RDS(on) @ VGS=4.5V100% Avalanche test Device Marking and Package InformationOrdering code Package MarkingMPGJ10R7MPGJ10R7 DFN5*6Maximum rati

Datasheet: BLS70R600-P , BLS70R600-U , BLS70R900-D , AMPCW120R30CV , AMPCW120R40CU , MPGC15R063 , MPGC20R170 , MPGJ04R017 , AO3401 , MPGJ80R040 , MPGP06R030H , MPGP10R033 , MPGW20R170 , MPSA60M082 , MPSW60M082 , MPSA60M160 , MPSP60M160 .

History: CEB6086 | AP60WN2K3H

Keywords - MPGJ10R7 MOSFET datasheet

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