MPGJ10R7 Datasheet and Replacement
Type Designator: MPGJ10R7
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 94 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: DFN5X6
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MPGJ10R7 Datasheet (PDF)
mpgj10r7.pdf

MPGJ 10R7FeaturesBVDSS=100V, ID =94A @ RDS(on) m (Max)GS=10V :6.5 VRDS(on) @ :9 m (Max) VGS=4.5V N-Channel5V Logic Level Control Enhancement mode DFN5*6 Very low on-resistance RDS(on) @ VGS=4.5V100% Avalanche test Device Marking and Package InformationOrdering code Package MarkingMPGJ10R7MPGJ10R7 DFN5*6Maximum rati
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: AP1RA03GMT-HF | SFF40N30MUB | NILMS4501NR2G | SI2308 | SRC60R680E | UT2302L-AE3 | UTT150N06
Keywords - MPGJ10R7 MOSFET datasheet
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History: AP1RA03GMT-HF | SFF40N30MUB | NILMS4501NR2G | SI2308 | SRC60R680E | UT2302L-AE3 | UTT150N06



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