All MOSFET. MPGJ80R040 Datasheet

 

MPGJ80R040 Datasheet and Replacement


   Type Designator: MPGJ80R040
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.2 nS
   Cossⓘ - Output Capacitance: 97.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: DFN5X6
 

 MPGJ80R040 substitution

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MPGJ80R040 Datasheet (PDF)

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MPGJ80R040

MPGJ 80R040FeaturesBVDSS= 80V, ID = 130A @ RDS(on) m (typ)GS=10V :2.6 V N-Channel Extremely low switching loss Excellent stability and uniformityDFN5*6 100% Avalanche test Device Marking and Package InformationOrdering code Package MarkingMPGJ80R040MPGJ80R040 DFN5*6Maximum ratings, at TA =25C, unless otherwise specified Symbol

Datasheet: BLS70R600-U , BLS70R900-D , AMPCW120R30CV , AMPCW120R40CU , MPGC15R063 , MPGC20R170 , MPGJ04R017 , MPGJ10R7 , IRF520 , MPGP06R030H , MPGP10R033 , MPGW20R170 , MPSA60M082 , MPSW60M082 , MPSA60M160 , MPSP60M160 , MPSH60M160 .

History: HGN650N15S | TPCS8303 | AOLF66610 | SVS80R800FE3 | STU2240NL | TPHR8504PL | S40N14RN

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