MPGJ80R040 Specs and Replacement

Type Designator: MPGJ80R040

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.2 nS

Cossⓘ - Output Capacitance: 97.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6

MPGJ80R040 substitution

- MOSFET ⓘ Cross-Reference Search

 

MPGJ80R040 datasheet

 ..1. Size:7162K  cn marching-power
 mpgj80r040.pdf pdf_icon

MPGJ80R040

MPGJ 80R040 Features BV DSS= 80V, I D = 130A @ RDS(on) m (typ) GS=10V 2.6 V N-Channel Extremely low switching loss Excellent stability and uniformity DFN5*6 100% Avalanche test Device Marking and Package Information Ordering code Package Marking MPGJ80R040 MPGJ80R040 DFN5*6 Maximum ratings, at TA =25 C, unless otherwise specified Symbol... See More ⇒

Detailed specifications: BLS70R600-U, BLS70R900-D, AMPCW120R30CV, AMPCW120R40CU, MPGC15R063, MPGC20R170, MPGJ04R017, MPGJ10R7, 75N75, MPGP06R030H, MPGP10R033, MPGW20R170, MPSA60M082, MPSW60M082, MPSA60M160, MPSP60M160, MPSH60M160

Keywords - MPGJ80R040 MOSFET specs

 MPGJ80R040 cross reference

 MPGJ80R040 equivalent finder

 MPGJ80R040 pdf lookup

 MPGJ80R040 substitution

 MPGJ80R040 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs