MPGJ80R040 MOSFET. Datasheet pdf. Equivalent
Type Designator: MPGJ80R040
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 130 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 61.4 nC
trⓘ - Rise Time: 10.2 nS
Cossⓘ - Output Capacitance: 97.2 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: DFN5X6
MPGJ80R040 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPGJ80R040 Datasheet (PDF)
..1. Size:7162K cn marching-power
mpgj80r040.pdf
mpgj80r040.pdf
MPGJ 80R040FeaturesBVDSS= 80V, ID = 130A @ RDS(on) m (typ)GS=10V :2.6 V N-Channel Extremely low switching loss Excellent stability and uniformityDFN5*6 100% Avalanche test Device Marking and Package InformationOrdering code Package MarkingMPGJ80R040MPGJ80R040 DFN5*6Maximum ratings, at TA =25C, unless otherwise specified Symbol
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