MPGP06R030H Specs and Replacement
Type Designator: MPGP06R030H
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 168 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1702 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO-220
MPGP06R030H substitution
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MPGP06R030H datasheet
mpgp06r030h.pdf
MPGP06R030H FEATURES BV DSS=60V, I D=160A RDS(on) @ 3.0m (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested TO-220 RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous Rectification Device Marking and Package Information Device Package Marking ... See More ⇒
Detailed specifications: BLS70R900-D, AMPCW120R30CV, AMPCW120R40CU, MPGC15R063, MPGC20R170, MPGJ04R017, MPGJ10R7, MPGJ80R040, AO3400A, MPGP10R033, MPGW20R170, MPSA60M082, MPSW60M082, MPSA60M160, MPSP60M160, MPSH60M160, MPSC60M160
Keywords - MPGP06R030H MOSFET specs
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History: MTE040N20P3 | HFS13N65U
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