All MOSFET. MPGP06R030H Datasheet

 

MPGP06R030H Datasheet and Replacement


   Type Designator: MPGP06R030H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 1702 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-220
 

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MPGP06R030H Datasheet (PDF)

 ..1. Size:7158K  cn marching-power
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MPGP06R030H

MPGP06R030HFEATURESBVDSS=60V, ID=160ARDS(on) @ :3.0m (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche testedTO-220 RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous RectificationDevice Marking and Package InformationDevice Package Marking

Datasheet: BLS70R900-D , AMPCW120R30CV , AMPCW120R40CU , MPGC15R063 , MPGC20R170 , MPGJ04R017 , MPGJ10R7 , MPGJ80R040 , RU6888R , MPGP10R033 , MPGW20R170 , MPSA60M082 , MPSW60M082 , MPSA60M160 , MPSP60M160 , MPSH60M160 , MPSC60M160 .

History: CED3100 | IPA60R125C6 | OSG60R099KSZF | MPSD70M910B | NDP6051 | OSG60R099KEZF | F3S90HVX2

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