MPGP10R033 Specs and Replacement
Type Designator: MPGP10R033
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 142 nS
Cossⓘ - Output Capacitance: 1692 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO-220
MPGP10R033 substitution
- MOSFET ⓘ Cross-Reference Search
MPGP10R033 datasheet
mpgp10r033.pdf
MPGP10R033 FEATURES BV DSS=100V, I D =160A RDS(on) @ 3.3m (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested TO-220 RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous Rectification Device Marking and Package Information Device Package Marking... See More ⇒
Detailed specifications: AMPCW120R30CV, AMPCW120R40CU, MPGC15R063, MPGC20R170, MPGJ04R017, MPGJ10R7, MPGJ80R040, MPGP06R030H, IRFB31N20D, MPGW20R170, MPSA60M082, MPSW60M082, MPSA60M160, MPSP60M160, MPSH60M160, MPSC60M160, MPSW60M160
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
