All MOSFET. FQP22N30 Datasheet

 

FQP22N30 Datasheet and Replacement


   Type Designator: FQP22N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 21 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 47 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO220
 

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FQP22N30 Datasheet (PDF)

 ..1. Size:757K  fairchild semi
 fqp22n30.pdf pdf_icon

FQP22N30

May 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 21A, 300V, RDS(on) = 0.16 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar stripe, DMOS technology. Low Crss ( typical 40 pF)This advanced technology has been esp

 ..2. Size:1466K  onsemi
 fqp22n30.pdf pdf_icon

FQP22N30

 9.1. Size:646K  fairchild semi
 fqp22p10.pdf pdf_icon

FQP22N30

TMQFETFQP22P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 160 pF)This advanced technology has been especially tailored to

Datasheet: FQP17P06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , AO4407 , FQP24N08 , FQP27N25 , FQP27P06 , FQP2N60C , FQP12N60C , FQP2N80 , FQP8N60C , FQP2N90 .

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