FQP22N30 MOSFET Datasheet: N-Ch, 300V, 21A. Full specification with pinout and replacement list

FQP22N30 Specs and Replacement

Type Designator: FQP22N30

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 170 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: TO220

FQP22N30 substitution

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FQP22N30 datasheet

..1. Size:757K fairchild semi
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May 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 300V, RDS(on) = 0.16 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 47 nC) planar stripe, DMOS technology. Low Crss ( typical 40 pF) This advanced technology has been esp... See More ⇒

..2. Size:1466K onsemi
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9.1. Size:646K fairchild semi
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TM QFET FQP22P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -22A, -100V, RDS(on) = 0.125 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 160 pF) This advanced technology has been especially tailored to ... See More ⇒

Detailed specifications: FQP17P06, FQP17P10, FQP19N20, FQPF13N50C, FQP19N20C, FQPF12N60C, FQP20N06, FQP20N06L, IRF530, FQP24N08, FQP27N25, FQP27P06, FQP2N60C, FQP12N60C, FQP2N80, FQP8N60C, FQP2N90