MPSU70M1K1B Specs and Replacement

Type Designator: MPSU70M1K1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 54 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO-251

MPSU70M1K1B substitution

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MPSU70M1K1B datasheet

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 mpsu70m1k1b.pdf pdf_icon

MPSU70M1K1B

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 mpsu70m1k5.pdf pdf_icon

MPSU70M1K1B

MPSU70M1K5 Power MOSFET 700V Super-Junction Power MOSFET Junction Power MOSFET Features BV DSS=700 V, I D=3 A RDS(on) @ 1.5 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliant TO-251 Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking a... See More ⇒

Detailed specifications: MPSA80M380B, MPSA80M670B, MPSA80M850B, MPSC60M160CFD, MPSC70M360B, MPSD70M600B, MPSD70M710B, MPSD70M910B, BS170, MPSU70M1K5, MPSW60M043CFD, MPSW60M086CFD, MPSW60M150B, MPSW65M045B, MPSW65M046CFD, MPSW65M065, MPSW65M092CFD

Keywords - MPSU70M1K1B MOSFET specs

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