MPTD50N60N Specs and Replacement

Type Designator: MPTD50N60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 50 nC

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 140 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO-252

MPTD50N60N substitution

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MPTD50N60N datasheet

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MPTD50N60N

MPTD50N60N FEATURES BVDSS=60V, ID=50A RDS(on) 17m (Max)@VGS=10V RDS(on) 20m (Max)@VGS=4.5V 100% avalanche tested TO-252 RoHS compliant APPLICATIONS Load Switch Power Management Motor Drive Application Device Marking and Package Information Ordering code Package Marking MPTD50N60N TO-252 MPTD50N60N Absolute Maximum Ratings TC = 25 unless otherw... See More ⇒

Detailed specifications: MPSW60M043CFD, MPSW60M086CFD, MPSW60M150B, MPSW65M045B, MPSW65M046CFD, MPSW65M065, MPSW65M092CFD, MPSY60M190B, 18N50, MPTO2N10, MPTO3N60, MPTP50N60N, MPVA10N65F, MPVA12N65F, MPVA13N50F, MPVA20N50B, MPVP20N50B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.