All MOSFET. MPTO2N10 Datasheet

 

MPTO2N10 Datasheet and Replacement


   Type Designator: MPTO2N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: SOT23
 

 MPTO2N10 substitution

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MPTO2N10 Datasheet (PDF)

 ..1. Size:2210K  cn marching-power
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MPTO2N10

MPTO2N10FeaturesBVDSS=100 V, ID =2AD @ RDS(on) m (Max) V:240 GS=10VEnhancement modeS Fully characterized avalanche voltage and current Ultra low RdsonSOT23-3LGApplication Power switching application Hard switched and high frequency circuits Uninterruptible power supplyDevice Marking and Package InformationOrdering code

Datasheet: MPSW60M086CFD , MPSW60M150B , MPSW65M045B , MPSW65M046CFD , MPSW65M065 , MPSW65M092CFD , MPSY60M190B , MPTD50N60N , 2N60 , MPTO3N60 , MPTP50N60N , MPVA10N65F , MPVA12N65F , MPVA13N50F , MPVA20N50B , MPVP20N50B , MPVW20N50B .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - MPTO2N10 MOSFET datasheet

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