MPTO2N10 Specs and Replacement

Type Designator: MPTO2N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V

Qg ⓘ - Total Gate Charge: 10 nC

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm

Package: SOT23

MPTO2N10 substitution

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MPTO2N10 datasheet

 ..1. Size:2210K  cn marching-power
 mpto2n10.pdf pdf_icon

MPTO2N10

MPTO2N10 Features BV DSS=100 V, I D =2A D @ RDS(on) m (Max) V 240 GS=10V Enhancement mode S Fully characterized avalanche voltage and current Ultra low Rdson SOT23-3L G Application Power switching application Hard switched and high frequency circuits Uninterruptible power supply Device Marking and Package Information Ordering code ... See More ⇒

Detailed specifications: MPSW60M086CFD, MPSW60M150B, MPSW65M045B, MPSW65M046CFD, MPSW65M065, MPSW65M092CFD, MPSY60M190B, MPTD50N60N, 20N50, MPTO3N60, MPTP50N60N, MPVA10N65F, MPVA12N65F, MPVA13N50F, MPVA20N50B, MPVP20N50B, MPVW20N50B

Keywords - MPTO2N10 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs