All MOSFET. MPTO3N60 Datasheet

 

MPTO3N60 Datasheet and Replacement


   Type Designator: MPTO3N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
 
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MPTO3N60 Datasheet (PDF)

 ..1. Size:2848K  cn marching-power
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MPTO3N60

MPTO3N60FeaturesBVDSS=60 V, I D =3AD @ RDS(on) m (Max) V :80 GS=10V @ RDS(on) m (Max) V:100 GS=4.5VSN-Channel5V Logic Level ControlSOT23-3LGEnhancement modeLow on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingDevice Marking and Package InformationOrdering code Package MarkingMPTO3N60 SOT23-3L MPTO3N60Maximum ratings,

Datasheet: MPSW60M150B , MPSW65M045B , MPSW65M046CFD , MPSW65M065 , MPSW65M092CFD , MPSY60M190B , MPTD50N60N , MPTO2N10 , CS150N03A8 , MPTP50N60N , MPVA10N65F , MPVA12N65F , MPVA13N50F , MPVA20N50B , MPVP20N50B , MPVW20N50B , MPVT20N50B .

History: STI22NM60N

Keywords - MPTO3N60 MOSFET datasheet

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