All MOSFET. MPTO3N60 Datasheet

 

MPTO3N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: MPTO3N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23

 MPTO3N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

MPTO3N60 Datasheet (PDF)

 ..1. Size:2848K  cn marching-power
 mpto3n60.pdf

MPTO3N60 MPTO3N60

MPTO3N60FeaturesBVDSS=60 V, I D =3AD @ RDS(on) m (Max) V :80 GS=10V @ RDS(on) m (Max) V:100 GS=4.5VSN-Channel5V Logic Level ControlSOT23-3LGEnhancement modeLow on-resistance RDS(on) @ VGS=4.5 V Fast SwitchingDevice Marking and Package InformationOrdering code Package MarkingMPTO3N60 SOT23-3L MPTO3N60Maximum ratings,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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