MPTO3N60 PDF and Equivalents Search

 

MPTO3N60 Specs and Replacement


   Type Designator: MPTO3N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
 

 MPTO3N60 substitution

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MPTO3N60 datasheet

 ..1. Size:2848K  cn marching-power
mpto3n60.pdf pdf_icon

MPTO3N60

MPTO3N60 Features BV DSS=60 V, I D =3A D @ RDS(on) m (Max) V 80 GS=10V @ RDS(on) m (Max) V 100 GS=4.5V S N-Channel 5V Logic Level Control SOT23-3L G Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V Fast Switching Device Marking and Package Information Ordering code Package Marking MPTO3N60 SOT23-3L MPTO3N60 Maximum ratings,... See More ⇒

Detailed specifications: MPSW60M150B , MPSW65M045B , MPSW65M046CFD , MPSW65M065 , MPSW65M092CFD , MPSY60M190B , MPTD50N60N , MPTO2N10 , IRF520 , MPTP50N60N , MPVA10N65F , MPVA12N65F , MPVA13N50F , MPVA20N50B , MPVP20N50B , MPVW20N50B , MPVT20N50B .

History: SVS65R240L8AD4TR | PSP13N50

Keywords - MPTO3N60 MOSFET specs

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