MPVW20N50B Specs and Replacement

Type Designator: MPVW20N50B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 221 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-247

MPVW20N50B substitution

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MPVW20N50B datasheet

 ..1. Size:1207K  cn marching-power
 mpva20n50b mpvp20n50b mpvw20n50b mpvt20n50b.pdf pdf_icon

MPVW20N50B

MPVX20N50B Series Power MOSFET MPSW60M041 FEATURES APPLICATIONS l BVDSS 500V, ID=20A l Switch Mode Power Supply (SMPS) l RDS(on) 0.3 (Max) @VGS=10V l Uninterruptible Power Supply (UPS) l Very Low FOM (RDS(on) *Qg) l Power Factor Correction (PFC) l Excellent stability and uniformity l AC to DC Converters D G S TO-220F TO-220 TO-247 TO-3P Ordering Information Type NO. Mar... See More ⇒

Detailed specifications: MPTO2N10, MPTO3N60, MPTP50N60N, MPVA10N65F, MPVA12N65F, MPVA13N50F, MPVA20N50B, MPVP20N50B, 75N75, MPVT20N50B, MPVA20N50F, MPVA20N65F, MPVP20N65F, MPVA2N65BK, MPVU2N65BK, MPVD2N65BK, MPVA4N65F

Keywords - MPVW20N50B MOSFET specs

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