All MOSFET. MPVW20N50B Datasheet

 

MPVW20N50B Datasheet and Replacement


   Type Designator: MPVW20N50B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 221 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-247
 

 MPVW20N50B substitution

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MPVW20N50B Datasheet (PDF)

 ..1. Size:1207K  cn marching-power
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MPVW20N50B

MPVX20N50B SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSl BVDSS: 500V, ID=20A l Switch Mode Power Supply (SMPS)l RDS(on) : 0.3(Max) @VGS=10Vl Uninterruptible Power Supply (UPS)l Very Low FOM (RDS(on) *Qg)l Power Factor Correction (PFC)l Excellent stability and uniformityl AC to DC ConvertersDGSTO-220F TO-220 TO-247TO-3POrdering InformationType NO. Mar

Datasheet: MPTO2N10 , MPTO3N60 , MPTP50N60N , MPVA10N65F , MPVA12N65F , MPVA13N50F , MPVA20N50B , MPVP20N50B , IRF520 , MPVT20N50B , MPVA20N50F , MPVA20N65F , MPVP20N65F , MPVA2N65BK , MPVU2N65BK , MPVD2N65BK , MPVA4N65F .

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