All MOSFET. MPVD5N50CCFD Datasheet

 

MPVD5N50CCFD Datasheet and Replacement


   Type Designator: MPVD5N50CCFD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.4 nS
   Cossⓘ - Output Capacitance: 61 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO-252
 

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MPVD5N50CCFD Datasheet (PDF)

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MPVD5N50CCFD

MPVX5N50CCFD SeriesPower MOSFETMPSW60M041FEATURESAPPLICATIONSBVDSS: 500V, ID=5A Power switch circuit of adaptor and chargerRDS(on) : 1.7(Max) @VGS=10VVery Low FOM (RDS(on) *Qg)Excellent stability and uniformityDGTO-252TO-251 SOrdering InformationType NO. Marking Package CodeMPVU5N50CCFD MPVU5N50CCFD TO-251MPVD5N50CCFD MPVD5N50CCFD TO-252Abso

Datasheet: MPVA4N65F , MPVU4N65F , MPVD4N65F , MPVA4N70F , MPVU4N70F , MPVD4N70F , MPVA7N65F , MPVU5N50CCFD , 2N7002 , FDM20R120AN4G , FDM30R650AN4G , FDM40R120AN4G , FDM50R120AN4G , FDM60R65AN4G , FDM80R120AN4G , FDZ65T300D8G , FDZ90T150PG .

History: IRF7416PBF | TSM23N50CN

Keywords - MPVD5N50CCFD MOSFET datasheet

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