FDM30R650AN4G Specs and Replacement

Type Designator: FDM30R650AN4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 326 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 95 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 295 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TO-247-4

FDM30R650AN4G substitution

- MOSFET ⓘ Cross-Reference Search

 

FDM30R650AN4G datasheet

 ..1. Size:3688K  first semi
 fdm30r650an4g.pdf pdf_icon

FDM30R650AN4G

FDM30R650AN4G Silicon Carbide Power MOSFET 650V, 95A, 28m General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features High Blocking Voltage High Frequency Operation Low on-resistance Fast intrinsic diode with low reverse recovery Applicati... See More ⇒

Detailed specifications: MPVD4N65F, MPVA4N70F, MPVU4N70F, MPVD4N70F, MPVA7N65F, MPVU5N50CCFD, MPVD5N50CCFD, FDM20R120AN4G, AO4407A, FDM40R120AN4G, FDM50R120AN4G, FDM60R65AN4G, FDM80R120AN4G, FDZ65T300D8G, FDZ90T150PG, FIR10N10LG, FIR10N20LG

Keywords - FDM30R650AN4G MOSFET specs

 FDM30R650AN4G cross reference

 FDM30R650AN4G equivalent finder

 FDM30R650AN4G pdf lookup

 FDM30R650AN4G substitution

 FDM30R650AN4G replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.