All MOSFET. FDM30R650AN4G Datasheet

 

FDM30R650AN4G Datasheet and Replacement


   Type Designator: FDM30R650AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 326 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 95 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 163 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 295 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-247-4
 

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FDM30R650AN4G Datasheet (PDF)

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FDM30R650AN4G

FDM30R650AN4GSilicon Carbide Power MOSFET 650V, 95A, 28mGeneral DescriptionThis product family offers state of the art performance. It is designed for high frequency applications herehigh efficiency and high reliability are required.Features High Blocking Voltage High Frequency Operation Low on-resistance Fast intrinsic diode with low reverserecoveryApplicati

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TMD3N80G | IRF100S201

Keywords - FDM30R650AN4G MOSFET datasheet

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