All MOSFET. FDM40R120AN4G Datasheet

 

FDM40R120AN4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDM40R120AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 64 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 148 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-247-4

 FDM40R120AN4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDM40R120AN4G Datasheet (PDF)

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 fdm40r120an4g.pdf

FDM40R120AN4G FDM40R120AN4G

FDM40R120AN4GSilicon Carbide Power MOSFET Product Summary V = 1200 VDSID@25oC = 64AR = 36mDS(ON) TO-247-4Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse re

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTK8N150L

 

 
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