FDM40R120AN4G Specs and Replacement

Type Designator: FDM40R120AN4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 64 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-247-4

FDM40R120AN4G substitution

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FDM40R120AN4G datasheet

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 fdm40r120an4g.pdf pdf_icon

FDM40R120AN4G

FDM40R120AN4G Silicon Carbide Power MOSFET Product Summary V = 1200 V DS I D@25oC = 64A R = 36m DS(ON) TO-247-4 Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse re... See More ⇒

Detailed specifications: MPVA4N70F, MPVU4N70F, MPVD4N70F, MPVA7N65F, MPVU5N50CCFD, MPVD5N50CCFD, FDM20R120AN4G, FDM30R650AN4G, 60N06, FDM50R120AN4G, FDM60R65AN4G, FDM80R120AN4G, FDZ65T300D8G, FDZ90T150PG, FIR10N10LG, FIR10N20LG, FIR10N50FG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.