All MOSFET. FDM40R120AN4G Datasheet

 

FDM40R120AN4G Datasheet and Replacement


   Type Designator: FDM40R120AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 148 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-247-4
 

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FDM40R120AN4G Datasheet (PDF)

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FDM40R120AN4G

FDM40R120AN4GSilicon Carbide Power MOSFET Product Summary V = 1200 VDSID@25oC = 64AR = 36mDS(ON) TO-247-4Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse re

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