All MOSFET. FDM40R120AN4G Datasheet

 

FDM40R120AN4G Datasheet and Replacement


   Type Designator: FDM40R120AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 64 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: TO-247-4
 

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FDM40R120AN4G Datasheet (PDF)

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FDM40R120AN4G

FDM40R120AN4GSilicon Carbide Power MOSFET Product Summary V = 1200 VDSID@25oC = 64AR = 36mDS(ON) TO-247-4Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse re

Datasheet: MPVA4N70F , MPVU4N70F , MPVD4N70F , MPVA7N65F , MPVU5N50CCFD , MPVD5N50CCFD , FDM20R120AN4G , FDM30R650AN4G , AO4468 , FDM50R120AN4G , FDM60R65AN4G , FDM80R120AN4G , FDZ65T300D8G , FDZ90T150PG , FIR10N10LG , FIR10N20LG , FIR10N50FG .

History: IXFK52N30Q | STE26NA90 | MDP2N60TH | IXFX90N30 | FQPF2N60C | IRF6898M | STE38N60

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