All MOSFET. FDM50R120AN4G Datasheet

 

FDM50R120AN4G Datasheet and Replacement


   Type Designator: FDM50R120AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 344 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.2(typ) V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 120 nC
   tr ⓘ - Rise Time: 28.9 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: TO-247-4
 

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FDM50R120AN4G Datasheet (PDF)

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FDM50R120AN4G

FDM50R120AN4GSilicon Carbide MOSFET 1200V, 50mGeneral DescriptionThis product family offers state of the art performance. It is designed for high frequency applications herehigh efficiency and high reliability are required.Features High voltage, low on resistance High speed, low parasitic capacitance High junction temperature Fast recovery diode Kelvin conne

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History: IRF8313PBF

Keywords - FDM50R120AN4G MOSFET datasheet

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