FDM50R120AN4G Specs and Replacement

Type Designator: FDM50R120AN4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 344 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.9 nS

Cossⓘ - Output Capacitance: 106 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: TO-247-4

FDM50R120AN4G substitution

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FDM50R120AN4G datasheet

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FDM50R120AN4G

FDM50R120AN4G Silicon Carbide MOSFET 1200V, 50m General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features High voltage, low on resistance High speed, low parasitic capacitance High junction temperature Fast recovery diode Kelvin conne... See More ⇒

Detailed specifications: MPVU4N70F, MPVD4N70F, MPVA7N65F, MPVU5N50CCFD, MPVD5N50CCFD, FDM20R120AN4G, FDM30R650AN4G, FDM40R120AN4G, IRFP064N, FDM60R65AN4G, FDM80R120AN4G, FDZ65T300D8G, FDZ90T150PG, FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs