FDM60R65AN4G Specs and Replacement

Type Designator: FDM60R65AN4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 51 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO-247-4

FDM60R65AN4G substitution

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FDM60R65AN4G datasheet

 ..1. Size:4926K  first semi
 fdm60r65an4g.pdf pdf_icon

FDM60R65AN4G

FDM60R65AN4G Product Summary V = 650 V DS I D@25oC = 51A R = 59m DS(ON) TO-247-4 Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse recovery Hard Switching & H... See More ⇒

 9.1. Size:322K  fairchild semi
 fdm606p.pdf pdf_icon

FDM60R65AN4G

December 2004 FDM606P P-Channel 1.8V Logic Level Power Trench MOSFET General Description Features This P-Channel MOSFET is produced using Fairchild Fast switching Semiconductor s advanced PowerTrench process that has rDS(ON) = 0.026 (Typ), VGS = -4.5V been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching ... See More ⇒

Detailed specifications: MPVD4N70F, MPVA7N65F, MPVU5N50CCFD, MPVD5N50CCFD, FDM20R120AN4G, FDM30R650AN4G, FDM40R120AN4G, FDM50R120AN4G, AO4468, FDM80R120AN4G, FDZ65T300D8G, FDZ90T150PG, FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG, FIR10N80FG

Keywords - FDM60R65AN4G MOSFET specs

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