All MOSFET. FDM60R65AN4G Datasheet

 

FDM60R65AN4G Datasheet and Replacement


   Type Designator: FDM60R65AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 51 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 78 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-247-4
 
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FDM60R65AN4G Datasheet (PDF)

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FDM60R65AN4G

FDM60R65AN4GProduct Summary V = 650 VDSID@25oC = 51A R = 59mDS(ON) TO-247-4Features Benefits High Blocking Voltage Higher System Efficiency High Frequency Operation Parallel Device Convenience without thermal runaway Low on-resistance High Temperature Application Fast intrinsic diode with low reverse recovery Hard Switching & H

 9.1. Size:322K  fairchild semi
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FDM60R65AN4G

December 2004FDM606P P-Channel 1.8V Logic Level Power Trench MOSFETGeneral Description FeaturesThis P-Channel MOSFET is produced using Fairchild Fast switchingSemiconductors advanced PowerTrench process that has rDS(ON) = 0.026 (Typ), VGS = -4.5Vbeen especially tailored to minimize the on-state resistanceand yet maintain low gate charge for superior switching

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