All MOSFET. FDM80R120AN4G Datasheet

 

FDM80R120AN4G Datasheet and Replacement


   Type Designator: FDM80R120AN4G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 42 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19.9 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-247-4
 

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FDM80R120AN4G Datasheet (PDF)

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FDM80R120AN4G

FDM80R120AN4GSilicon Carbide MOSFET 1200V, 80mGeneral DescriptionThis product family offers state of the art performance. It is designed for high frequency applications herehigh efficiency and high reliability are required.Features High voltage, low on resistance High speed, low parasitic capacitance High junction temperature Fast recovery diodeTO-247-4Pin de

Datasheet: MPVA7N65F , MPVU5N50CCFD , MPVD5N50CCFD , FDM20R120AN4G , FDM30R650AN4G , FDM40R120AN4G , FDM50R120AN4G , FDM60R65AN4G , BS170 , FDZ65T300D8G , FDZ90T150PG , FIR10N10LG , FIR10N20LG , FIR10N50FG , FIR10N70FG , FIR10N80FG , FIR110N10PG .

History: SI9424DY | TMP11N50SG | AOT4N60

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