FDM80R120AN4G Specs and Replacement

Type Designator: FDM80R120AN4G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.9 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-247-4

FDM80R120AN4G substitution

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FDM80R120AN4G datasheet

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 fdm80r120an4g.pdf pdf_icon

FDM80R120AN4G

FDM80R120AN4G Silicon Carbide MOSFET 1200V, 80m General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features High voltage, low on resistance High speed, low parasitic capacitance High junction temperature Fast recovery diode TO-247-4 Pin de... See More ⇒

Detailed specifications: MPVA7N65F, MPVU5N50CCFD, MPVD5N50CCFD, FDM20R120AN4G, FDM30R650AN4G, FDM40R120AN4G, FDM50R120AN4G, FDM60R65AN4G, IRF730, FDZ65T300D8G, FDZ90T150PG, FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG, FIR10N80FG, FIR110N10PG

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.