FDZ65T300D8G Specs and Replacement

Type Designator: FDZ65T300D8G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 18 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: DFN8X8

FDZ65T300D8G substitution

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FDZ65T300D8G datasheet

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FDZ65T300D8G

FDZ65T300D8G 650V GaN Power Transistor (FET) Features Product Summary Easy to use, compatible with standard gate drivers V 650 V DSS Excellent Q x R figure of merit (FOM) g DS(on) R 240 m DS(on), typ Low Q , no free-wheeling diode required rr Q 21.5 nC G, typ Low switching loss Q 39 nC RR, typ RoHS compliant and Halogen-free Applications S High eff... See More ⇒

Detailed specifications: MPVU5N50CCFD, MPVD5N50CCFD, FDM20R120AN4G, FDM30R650AN4G, FDM40R120AN4G, FDM50R120AN4G, FDM60R65AN4G, FDM80R120AN4G, IRFZ44N, FDZ90T150PG, FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG, FIR10N80FG, FIR110N10PG, FIR11N40FG

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