All MOSFET. FDZ65T300D8G Datasheet

 

FDZ65T300D8G Datasheet and Replacement


   Type Designator: FDZ65T300D8G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 18 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: DFN8X8
 

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FDZ65T300D8G Datasheet (PDF)

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FDZ65T300D8G

FDZ65T300D8G650V GaN Power Transistor (FET)FeaturesProduct Summary Easy to use, compatible with standard gate driversV 650 VDSS Excellent Q x R figure of merit (FOM)g DS(on)R 240 mDS(on), typ Low Q , no free-wheeling diode requiredrrQ 21.5 nCG, typ Low switching lossQ 39 nCRR, typ RoHS compliant and Halogen-freeApplicationsS High eff

Datasheet: MPVU5N50CCFD , MPVD5N50CCFD , FDM20R120AN4G , FDM30R650AN4G , FDM40R120AN4G , FDM50R120AN4G , FDM60R65AN4G , FDM80R120AN4G , IRFZ44N , FDZ90T150PG , FIR10N10LG , FIR10N20LG , FIR10N50FG , FIR10N70FG , FIR10N80FG , FIR110N10PG , FIR11N40FG .

History: SI9933CDY | SI9424DY | B50N06 | AOT4N60 | JMTP3010D | DM4N65E | IXTH10N100

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