All MOSFET. FDZ90T150PG Datasheet

 

FDZ90T150PG Datasheet and Replacement


   Type Designator: FDZ90T150PG
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 23 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm
   Package: TO-220
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FDZ90T150PG Datasheet (PDF)

 ..1. Size:1608K  first semi
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FDZ90T150PG

FDZ90T150PG 900V GaN Power Transistor (FET) Features Easy to use, compatible with standard gate driversProduct Summary Superior reliability with BVDSS over 1500VVDSS 900 V Low QRR, no free-wheeling diode requiredRDS(on), typ 150 m Excellent QG x RDS(on) figure of merit (FOM)QG, typ 38 nC Low switching lossQRR, typ 26 nC RoHS compliant and Halo

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History: FDMS9620S | AM2314NE | WMM11N80M3 | IRFI7536G

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