FDZ90T150PG Specs and Replacement

Type Designator: FDZ90T150PG

Type of Transistor: GaN

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.175 Ohm

Package: TO-220

FDZ90T150PG substitution

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FDZ90T150PG datasheet

 ..1. Size:1608K  first semi
 fdz90t150pg.pdf pdf_icon

FDZ90T150PG

FDZ90T150PG 900V GaN Power Transistor (FET) Features Easy to use, compatible with standard gate drivers Product Summary Superior reliability with BVDSS over 1500V VDSS 900 V Low QRR, no free-wheeling diode required RDS(on), typ 150 m Excellent QG x RDS(on) figure of merit (FOM) QG, typ 38 nC Low switching loss QRR, typ 26 nC RoHS compliant and Halo... See More ⇒

Detailed specifications: MPVD5N50CCFD, FDM20R120AN4G, FDM30R650AN4G, FDM40R120AN4G, FDM50R120AN4G, FDM60R65AN4G, FDM80R120AN4G, FDZ65T300D8G, IRF3205, FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG, FIR10N80FG, FIR110N10PG, FIR11N40FG, FIR11N90ANG

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