FIR13N50FG MOSFET. Datasheet pdf. Equivalent
Type Designator: FIR13N50FG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO-220F
FIR13N50FG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FIR13N50FG Datasheet (PDF)
..1. Size:4923K first semi
fir13n50fg.pdf
fir13n50fg.pdf
FIR13N50FGCREAT BY ARTAdvanced N-Ch Power MOSFET-GPIN Connection TO-220FVDSS 500 VID 13 APD (TC=25) 150 WRDS(ON) 0.4 G D S Features Fast Switching gSchematic dia ram Low ON Resistance(Rdson0.5 ) D Low Gate Charge (Typical Data:85nC) Low Reverse transfer capacitances(Typical:100pF) G 100% Single Pulse avalanche energy Test S Marking Di
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