All MOSFET. FIR13N50FG Datasheet

 

FIR13N50FG Datasheet and Replacement


   Type Designator: FIR13N50FG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO-220F
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FIR13N50FG Datasheet (PDF)

 ..1. Size:4923K  first semi
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FIR13N50FG

FIR13N50FGCREAT BY ARTAdvanced N-Ch Power MOSFET-GPIN Connection TO-220FVDSS 500 VID 13 APD (TC=25) 150 WRDS(ON) 0.4 G D S Features Fast Switching gSchematic dia ram Low ON Resistance(Rdson0.5 ) D Low Gate Charge (Typical Data:85nC) Low Reverse transfer capacitances(Typical:100pF) G 100% Single Pulse avalanche energy Test S Marking Di

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History: WMM11N80M3 | FDMS9620S | AM2314NE | RFP2N10L | IRFI7536G

Keywords - FIR13N50FG MOSFET datasheet

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