All MOSFET. FIR16N06DG Datasheet

 

FIR16N06DG Datasheet and Replacement


   Type Designator: FIR16N06DG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 95 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: SOP-8
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FIR16N06DG Datasheet (PDF)

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FIR16N06DG

FIR16N06DGN-Channel 60V (D-S) MOSFETPIN CONFIGURATIONDescription(SOP-8)The FIR16N06DG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switchin g powe r losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ide al for high-frequency switching an

 8.1. Size:3975K  first semi
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FIR16N06DG

FIR16N50FGCREAT BY ARTN-Channel Power MOSFETPIN Connection TO-220FVDSS 500 VID 16 APD (TC=25) 70 WRDS(ON) 0.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson0.40) Low Gate Charge (Typical Data:50nC) G Low Reverse transfer capacitances(Typical:25.5pF) 100% Single Pulse avalanche energy Test S Marking DiagramAp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - FIR16N06DG MOSFET datasheet

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