All MOSFET. FIR16N50FG Datasheet

 

FIR16N50FG Datasheet and Replacement


   Type Designator: FIR16N50FG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220F
 

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FIR16N50FG Datasheet (PDF)

 ..1. Size:3975K  first semi
 fir16n50fg.pdf pdf_icon

FIR16N50FG

FIR16N50FGCREAT BY ARTN-Channel Power MOSFETPIN Connection TO-220FVDSS 500 VID 16 APD (TC=25) 70 WRDS(ON) 0.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson0.40) Low Gate Charge (Typical Data:50nC) G Low Reverse transfer capacitances(Typical:25.5pF) 100% Single Pulse avalanche energy Test S Marking DiagramAp

 8.1. Size:2917K  first semi
 fir16n06dg.pdf pdf_icon

FIR16N50FG

FIR16N06DGN-Channel 60V (D-S) MOSFETPIN CONFIGURATIONDescription(SOP-8)The FIR16N06DG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switchin g powe r losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ide al for high-frequency switching an

Datasheet: FIR13N50FG , FIR14N50FG , FIR14N65FG , FIR14NS65AFG , FIR14NS70AFG , FIR150N06PG , FIR15N10LG , FIR16N06DG , 2SK3878 , FIR18N50FG , FIR18N65FG , FIR19N20LG , FIR20N06LG , FIR20N10LG , FIR20N15LG , FIR20N50FG , FIR20N60FG .

History: F10W90HVX2 | IRF3704PBF | AOB296L | WFW20N60W | IRH7250 | RQ3E100BN | AP3700YT

Keywords - FIR16N50FG MOSFET datasheet

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