FIR19N20LG Specs and Replacement

Type Designator: FIR19N20LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO-252

FIR19N20LG substitution

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FIR19N20LG datasheet

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FIR19N20LG

FIR19N20LG 200V N-Channel MOSFET-M PIN Connection TO-252 VDSS 200 V ID 18 A PD(TC=25 ) 100 W RDS(ON)Typ 0.12 Features Fast Switching Low ON Resistance(Rdson 0.18 ) ) Low Gate Charge (Typical Data 24nC Low Reverse transfer capacitances(Typical 25pF) 100% Single Pulse avalanche energy Test Marking Diagram Applications YAWW Y = Year CRT TV/Monitor and... See More ⇒

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.