All MOSFET. FIR24N50APTG Datasheet

 

FIR24N50APTG Datasheet and Replacement


   Type Designator: FIR24N50APTG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 290 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 250 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-3P
 

 FIR24N50APTG substitution

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FIR24N50APTG Datasheet (PDF)

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FIR24N50APTG

FIR24N50APTGHigh Voltage N-Channel MOSFETPIN Connection TO-3PFeatures Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :90 nC (Typ.) gSchematic dia ram BVDSS=500V,ID=24A D Lower RDS(on) : 0.2 (Max) @VG=10V G 100% Avalanche Tested S Marking DiagramY = YearA = Assembly Location

Datasheet: FIR19N20LG , FIR20N06LG , FIR20N10LG , FIR20N15LG , FIR20N50FG , FIR20N60FG , FIR20N65FG , FIR20NS65AFG , IRLB4132 , FIR25N03D3G , FIR2N60AFG , FIR2N65AFG , FIR2N70FG , FIR2N80FG , FIR30N03D3G , FIR40N10LG , FIR40N15LG .

History: IRFR110 | IRF642

Keywords - FIR24N50APTG MOSFET datasheet

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