All MOSFET. FIR25N03D3G Datasheet

 

FIR25N03D3G Datasheet and Replacement


   Type Designator: FIR25N03D3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN3X3
 

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FIR25N03D3G Datasheet (PDF)

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FIR25N03D3G

FIR25N03D3G30V/25A N-Channel Advanced Power MOSFET-EPIN Connection PDFN3*3Features: N-Channel5V Logic Level Control Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching 100% Avalanche testMarking DiagramY = YearYAWWA = Assembly LocationFIR25N03D3WW = Work WeekFIR25N03D3 = Specific Device CodeAbsolute Maximum Ratings* (Tc=25

Datasheet: FIR20N06LG , FIR20N10LG , FIR20N15LG , FIR20N50FG , FIR20N60FG , FIR20N65FG , FIR20NS65AFG , FIR24N50APTG , AO3401 , FIR2N60AFG , FIR2N65AFG , FIR2N70FG , FIR2N80FG , FIR30N03D3G , FIR40N10LG , FIR40N15LG , FIR40N20LG .

History: RS1E350BN

Keywords - FIR25N03D3G MOSFET datasheet

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