FIR30N03D3G Specs and Replacement

Type Designator: FIR30N03D3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: DFN3X3

FIR30N03D3G substitution

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FIR30N03D3G datasheet

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FIR30N03D3G

FIR30N03D3G 30V/30A N-Channel Advanced Power MOSFET-C PIN Connection DFN3*3 Features High ruggedness Enhancement mode Very low on-resistance RDS(on) Typ8.7m @ VGS=4.5 V Typ5.7m @ VGS=10 V Low Gate Charge Typ 34nC 100% Avalanche test Improved dv/dt Capability Application Synchronous Rectification Li Battery Protect Board, Inverter Marking Diagram Y ... See More ⇒

Detailed specifications: FIR20N65FG, FIR20NS65AFG, FIR24N50APTG, FIR25N03D3G, FIR2N60AFG, FIR2N65AFG, FIR2N70FG, FIR2N80FG, SKD502T, FIR40N10LG, FIR40N15LG, FIR40N20LG, FIR4N70FG, FIR4N80FG, FIR4N90FG, FIR50N06LG, FIR50N15PG

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs