All MOSFET. FIR30N03D3G Datasheet

 

FIR30N03D3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR30N03D3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: DFN3X3

 FIR30N03D3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR30N03D3G Datasheet (PDF)

 ..1. Size:2437K  first semi
 fir30n03d3g.pdf

FIR30N03D3G FIR30N03D3G

FIR30N03D3G30V/30A N-Channel Advanced Power MOSFET-CPIN Connection DFN3*3Features: High ruggedness Enhancement mode Very low on-resistance RDS(on) Typ8.7m@ VGS=4.5 VTyp5.7m@ VGS=10 V Low Gate Charge Typ 34nC 100% Avalanche test Improved dv/dt Capability Application:Synchronous Rectification Li Battery Protect Board, InverterMarking DiagramY

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: NTD5802N

 

 
Back to Top