All MOSFET. FIR30N03D3G Datasheet

 

FIR30N03D3G Datasheet and Replacement


   Type Designator: FIR30N03D3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: DFN3X3
 

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FIR30N03D3G Datasheet (PDF)

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FIR30N03D3G

FIR30N03D3G30V/30A N-Channel Advanced Power MOSFET-CPIN Connection DFN3*3Features: High ruggedness Enhancement mode Very low on-resistance RDS(on) Typ8.7m@ VGS=4.5 VTyp5.7m@ VGS=10 V Low Gate Charge Typ 34nC 100% Avalanche test Improved dv/dt Capability Application:Synchronous Rectification Li Battery Protect Board, InverterMarking DiagramY

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History: PTP08N08NA

Keywords - FIR30N03D3G MOSFET datasheet

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