FIR40N10LG Specs and Replacement

Type Designator: FIR40N10LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-252

FIR40N10LG substitution

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FIR40N10LG datasheet

 ..1. Size:2137K  first semi
 fir40n10lg.pdf pdf_icon

FIR40N10LG

FIR40N10LG 100V N-Channel MOSFET TO-252 Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 61.7nC (Typ.). BVDSS=100V,ID=40A RDS(on) 0.032 (Max) @VG=10V 100% Avalanche Tested 1.Gate (G) 2.Drain (D) 3.Sourse (S) Absolute Maximum Ratings* (Tc=25 Unless otherwise no... See More ⇒

 7.1. Size:4219K  first semi
 fir40n15lg.pdf pdf_icon

FIR40N10LG

FIR40N15LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description The FIR40N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON) ... See More ⇒

 8.1. Size:4328K  first semi
 fir40n20lg.pdf pdf_icon

FIR40N10LG

FIR40N20LG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-252 Description The FIR40N20LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON) ... See More ⇒

Detailed specifications: FIR20NS65AFG, FIR24N50APTG, FIR25N03D3G, FIR2N60AFG, FIR2N65AFG, FIR2N70FG, FIR2N80FG, FIR30N03D3G, K4145, FIR40N15LG, FIR40N20LG, FIR4N70FG, FIR4N80FG, FIR4N90FG, FIR50N06LG, FIR50N15PG, FIR5N50FG

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