FIR40N10LG Datasheet and Replacement
Type Designator: FIR40N10LG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO-252
FIR40N10LG substitution
FIR40N10LG Datasheet (PDF)
fir40n10lg.pdf

FIR40N10LG100V N-Channel MOSFET TO-252Features: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 61.7nC (Typ.). BVDSS=100V,ID=40A RDS(on) : 0.032 (Max) @VG=10V 100% Avalanche Tested 1.Gate (G)2.Drain (D)3.Sourse (S)Absolute Maximum Ratings* (Tc=25 Unless otherwise no
fir40n15lg.pdf

FIR40N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =40A RDS(ON)
fir40n20lg.pdf

FIR40N20LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252DescriptionThe FIR40N20LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =24A RDS(ON)
Datasheet: FIR20NS65AFG , FIR24N50APTG , FIR25N03D3G , FIR2N60AFG , FIR2N65AFG , FIR2N70FG , FIR2N80FG , FIR30N03D3G , IRFB3607 , FIR40N15LG , FIR40N20LG , FIR4N70FG , FIR4N80FG , FIR4N90FG , FIR50N06LG , FIR50N15PG , FIR5N50FG .
History: 2SJ553L | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | FTK7002U | SM140R50CT1TL
Keywords - FIR40N10LG MOSFET datasheet
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History: 2SJ553L | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | FTK7002U | SM140R50CT1TL



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