All MOSFET. FIR50N06LG Datasheet

 

FIR50N06LG Datasheet and Replacement


   Type Designator: FIR50N06LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 86.67 nS
   Cossⓘ - Output Capacitance: 393.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-252
      - MOSFET Cross-Reference Search

 

FIR50N06LG Datasheet (PDF)

 ..1. Size:4356K  first semi
 fir50n06lg.pdf pdf_icon

FIR50N06LG

FIR50N06LGN-Channel Enhancement Mode Power Mosfet-EPIN Connection TO-252DescriptionThe FIR50N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 8.1. Size:4894K  first semi
 fir50n15pg.pdf pdf_icon

FIR50N06LG

FIR50N15PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR50N15PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

Keywords - FIR50N06LG MOSFET datasheet

 FIR50N06LG cross reference
 FIR50N06LG equivalent finder
 FIR50N06LG lookup
 FIR50N06LG substitution
 FIR50N06LG replacement

 

 
Back to Top

 


 
.