FIR50N06LG Specs and Replacement

Type Designator: FIR50N06LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 86.67 nS

Cossⓘ - Output Capacitance: 393.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-252

FIR50N06LG substitution

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FIR50N06LG datasheet

 ..1. Size:4356K  first semi
 fir50n06lg.pdf pdf_icon

FIR50N06LG

FIR50N06LG N-Channel Enhancement Mode Power Mosfet-E PIN Connection TO-252 Description The FIR50N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON) ... See More ⇒

 8.1. Size:4894K  first semi
 fir50n15pg.pdf pdf_icon

FIR50N06LG

FIR50N15PG N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220AB Description The FIR50N15PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON) ... See More ⇒

Detailed specifications: FIR2N80FG, FIR30N03D3G, FIR40N10LG, FIR40N15LG, FIR40N20LG, FIR4N70FG, FIR4N80FG, FIR4N90FG, IRFB3607, FIR50N15PG, FIR5N50FG, FIR5N65FG, FIR5N80FG, FIR5NS70ALG, FIR60N04LG, FIR6N40FG, FIR6N60FG

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.