All MOSFET. FIR50N06LG Datasheet

 

FIR50N06LG Datasheet and Replacement


   Type Designator: FIR50N06LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 86.67 nS
   Cossⓘ - Output Capacitance: 393.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-252
 

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FIR50N06LG Datasheet (PDF)

 ..1. Size:4356K  first semi
 fir50n06lg.pdf pdf_icon

FIR50N06LG

FIR50N06LGN-Channel Enhancement Mode Power Mosfet-EPIN Connection TO-252DescriptionThe FIR50N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =50A RDS(ON)

 8.1. Size:4894K  first semi
 fir50n15pg.pdf pdf_icon

FIR50N06LG

FIR50N15PGN-Channel Enhancement Mode Power MosfetPIN Connection TO-220ABDescriptionThe FIR50N15PG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =50A RDS(ON)

Datasheet: FIR2N80FG , FIR30N03D3G , FIR40N10LG , FIR40N15LG , FIR40N20LG , FIR4N70FG , FIR4N80FG , FIR4N90FG , IRF1407 , FIR50N15PG , FIR5N50FG , FIR5N65FG , FIR5N80FG , FIR5NS70ALG , FIR60N04LG , FIR6N40FG , FIR6N60FG .

History: FQI4N20TU | APT17F80S

Keywords - FIR50N06LG MOSFET datasheet

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