All MOSFET. FIR60N04LG Datasheet

 

FIR60N04LG Datasheet and Replacement


   Type Designator: FIR60N04LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-252
 

 FIR60N04LG substitution

   - MOSFET ⓘ Cross-Reference Search

 

FIR60N04LG Datasheet (PDF)

 ..1. Size:4689K  first semi
 fir60n04lg.pdf pdf_icon

FIR60N04LG

FIR60N04LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252Description The FIR60N04LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D VDS =40V,ID =60A RDS(ON)

Datasheet: FIR4N80FG , FIR4N90FG , FIR50N06LG , FIR50N15PG , FIR5N50FG , FIR5N65FG , FIR5N80FG , FIR5NS70ALG , 20N50 , FIR6N40FG , FIR6N60FG , FIR6N65FG , FIR6N70FG , FIR6N90FG , FIR7NS65AFG , FIR7NS70AFG , FIR7NS70ALG .

History: IRF3305B | SVF4N60CAFJ

Keywords - FIR60N04LG MOSFET datasheet

 FIR60N04LG cross reference
 FIR60N04LG equivalent finder
 FIR60N04LG lookup
 FIR60N04LG substitution
 FIR60N04LG replacement

 

 
Back to Top

 


 
.