All MOSFET. FIR60N04LG Datasheet

 

FIR60N04LG Datasheet and Replacement


   Type Designator: FIR60N04LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-252
 

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FIR60N04LG Datasheet (PDF)

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FIR60N04LG

FIR60N04LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252Description The FIR60N04LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D VDS =40V,ID =60A RDS(ON)

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History: VS4618AP

Keywords - FIR60N04LG MOSFET datasheet

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