FIR60N04LG Specs and Replacement

Type Designator: FIR60N04LG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.2 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-252

FIR60N04LG substitution

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FIR60N04LG datasheet

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 fir60n04lg.pdf pdf_icon

FIR60N04LG

FIR60N04LG N-Channel 100V(D-S) MOSFET PIN Connection TO-252 Description The FIR60N04LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D VDS =40V,ID =60A RDS(ON) ... See More ⇒

Detailed specifications: FIR4N80FG, FIR4N90FG, FIR50N06LG, FIR50N15PG, FIR5N50FG, FIR5N65FG, FIR5N80FG, FIR5NS70ALG, STP80NF70, FIR6N40FG, FIR6N60FG, FIR6N65FG, FIR6N70FG, FIR6N90FG, FIR7NS65AFG, FIR7NS70AFG, FIR7NS70ALG

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