All MOSFET. FIR60N04LG Datasheet

 

FIR60N04LG MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR60N04LG
   Marking Code: FIR60N04L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO-252

 FIR60N04LG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR60N04LG Datasheet (PDF)

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 fir60n04lg.pdf

FIR60N04LG FIR60N04LG

FIR60N04LGN-Channel 100V(D-S) MOSFETPIN Connection TO-252Description The FIR60N04LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features D VDS =40V,ID =60A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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