FIR96N08PG Specs and Replacement
Type Designator: FIR96N08PG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 146 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 96 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 387 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0072 Ohm
Package: TO-220
FIR96N08PG substitution
- MOSFET ⓘ Cross-Reference Search
FIR96N08PG datasheet
fir96n08pg.pdf
FIR96N08PG Package Dimensions TO-220 Units mm Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 4.42 4.72 0.174 0.188 A1 2.52 2.82 0.099 0.111 b 0.71 0.91 0.028 0.036 b1 1.17 1.37 0.046 0.054 c 0.36 0.46 0.014 0.018 c1 1.17 1.37 0.046 0.054 D 9.95 10.25 0.392 0.0404 E 8.8 9.1 0.346 0.358 E1 12.55 12.85 0.494 0.506 e 2.540TYP 0.100TYP e1... See More ⇒
Detailed specifications: FIR7NS70ALG, FIR80N03LG, FIR80N08PG, FIR80N10LG, FIR8N60FG, FIR8N65FG, FIR8N70FG, FIR8N80FG, IRF520, FIR9N50FG, FIR9N65LG, FIR9N90FG, DAC014N120Z5, DAC015N065Z2, DAC016N120P2, DAC016N120Z2, DAC020N065Z1
Keywords - FIR96N08PG MOSFET specs
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