All MOSFET. DAC015N065Z2 Datasheet

 

DAC015N065Z2 Datasheet and Replacement


   Type Designator: DAC015N065Z2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 440 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 19 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: TO247-4L
      - MOSFET Cross-Reference Search

 

DAC015N065Z2 Datasheet (PDF)

 ..1. Size:1112K  dacosemi
 dac015n065z2.pdf pdf_icon

DAC015N065Z2

DAC015N065Z2Silicon Carbide Enhancement Mode MOSFETVDSS 650VFeaturesI 120AD(@25 ) RDS(ON) 15m TO-247-4L Benefits

 9.1. Size:1399K  dacosemi
 dac016n120z2.pdf pdf_icon

DAC015N065Z2

DAC016N120Z2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 115AD(@25 ) RDS(ON) 16m TO-247-4L B

 9.2. Size:1769K  dacosemi
 dac016n120p2.pdf pdf_icon

DAC015N065Z2

DAC016N120P2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 115AD(@25 ) RDS(ON) 16m TO-247-3L Bene

 9.3. Size:1115K  dacosemi
 dac014n120z5.pdf pdf_icon

DAC015N065Z2

DAC014N120Z5Silicon Carbide Enhancement Mode MOSFETFeaturesVDSS 1200V I 135AD(@25 ) RDS(ON) 14m TO-247-4L Benefits Pack

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History: RFD14N06L | BUK6246-75C | P0706BD | ZXM64N035L3 | AP2612GY-HF | HUF75339P3 | AOT20N60L

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