All MOSFET. DAC030N120Z1 Datasheet

 

DAC030N120Z1 Datasheet and Replacement


   Type Designator: DAC030N120Z1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 375 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 198 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO247-4L
 

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DAC030N120Z1 Datasheet (PDF)

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DAC030N120Z1

DAC030N120Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 1200VFeaturesI 78AD(@25 ) RDS(ON) 30m Drain(Pin1, TAB) TO-247-.4L Package

Datasheet: FIR9N65LG , FIR9N90FG , DAC014N120Z5 , DAC015N065Z2 , DAC016N120P2 , DAC016N120Z2 , DAC020N065Z1 , DAC021N120Z4 , IRFZ48N , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 , DACMH40N1200 .

History: QM09N50F | HGN080N10AL | 2SK1064 | SSF2610E | AP65SL190AWL | TPCA8027-H | GSM8473

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