All MOSFET. DAC040N120Z1 Datasheet

 

DAC040N120Z1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DAC040N120Z1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 326 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7(typ) V
   |Id|ⓘ - Maximum Drain Current: 62 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 229 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO247-4L

 DAC040N120Z1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAC040N120Z1 Datasheet (PDF)

 ..1. Size:492K  dacosemi
dac040n120z1.pdf

DAC040N120Z1
DAC040N120Z1

DAC040N120Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 1200VFeaturesI 62AD(@25 ) RDS(ON) 40mDrain (Pin1, TAB) TO-247-.4L Package

 3.1. Size:1556K  dacosemi
dac040n120z5.pdf

DAC040N120Z1
DAC040N120Z1

DAC040N120Z5Silicon Carbide Enhancement Mode MOSFETFeaturesVDSS 1200VPreliminary I 54AD(@25 ) RDS(ON) 40m TO-247-4L Benefits

 4.1. Size:1396K  dacosemi
dac040n120p2.pdf

DAC040N120Z1
DAC040N120Z1

DAC040N120P2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 60AD(@25 ) RDS(ON) 40m TO-247-3LBenefits

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AP2307GN-HF | CS1N60B3R

 

 
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