All MOSFET. DAC040N120Z1 Datasheet

 

DAC040N120Z1 Datasheet and Replacement


   Type Designator: DAC040N120Z1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 326 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO247-4L
 

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DAC040N120Z1 Datasheet (PDF)

 ..1. Size:492K  dacosemi
 dac040n120z1.pdf pdf_icon

DAC040N120Z1

DAC040N120Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 1200VFeaturesI 62AD(@25 ) RDS(ON) 40mDrain (Pin1, TAB) TO-247-.4L Package

 3.1. Size:1556K  dacosemi
 dac040n120z5.pdf pdf_icon

DAC040N120Z1

DAC040N120Z5Silicon Carbide Enhancement Mode MOSFETFeaturesVDSS 1200VPreliminary I 54AD(@25 ) RDS(ON) 40m TO-247-4L Benefits

 4.1. Size:1396K  dacosemi
 dac040n120p2.pdf pdf_icon

DAC040N120Z1

DAC040N120P2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 60AD(@25 ) RDS(ON) 40m TO-247-3LBenefits

Datasheet: DAC014N120Z5 , DAC015N065Z2 , DAC016N120P2 , DAC016N120Z2 , DAC020N065Z1 , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , MMIS60R580P , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK .

History: AP9120GH | PSMN2R2-40YSD

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