DAC040N120Z1 Datasheet and Replacement
Type Designator: DAC040N120Z1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 326 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 62 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO247-4L
- MOSFET Cross-Reference Search
DAC040N120Z1 Datasheet (PDF)
dac040n120z1.pdf

DAC040N120Z1DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETVDSS 1200VFeaturesI 62AD(@25 ) RDS(ON) 40mDrain (Pin1, TAB) TO-247-.4L Package
dac040n120z5.pdf

DAC040N120Z5Silicon Carbide Enhancement Mode MOSFETFeaturesVDSS 1200VPreliminary I 54AD(@25 ) RDS(ON) 40m TO-247-4L Benefits
dac040n120p2.pdf

DAC040N120P2Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 60AD(@25 ) RDS(ON) 40m TO-247-3LBenefits
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: IPL65R165CFD | LKK47-06C5 | TSM4424CS | SM6025NSKP | OSG60R380PF | IRFB3004GPBF | BRCS200P03DP
Keywords - DAC040N120Z1 MOSFET datasheet
DAC040N120Z1 cross reference
DAC040N120Z1 equivalent finder
DAC040N120Z1 lookup
DAC040N120Z1 substitution
DAC040N120Z1 replacement
History: IPL65R165CFD | LKK47-06C5 | TSM4424CS | SM6025NSKP | OSG60R380PF | IRFB3004GPBF | BRCS200P03DP



LIST
Last Update
MOSFET: ZM019N03N | DH116N08I | DH116N08F | DH116N08E | DH116N08D | DH116N08B | DH116N08 | DH10H037R | DH10H035R | DH100P40 | DH100P35I | DH100P35F | DH100P35E | DH100P35D | DH100P35B | DH100P35
Popular searches
2n4250 | d882 transistor equivalent | 17n80c3 | bc107 transistor | rjp63g4 datasheet | 2sc1115 | c3998 transistor | 2sa679