DAC060N120P1 Datasheet and Replacement
Type Designator: DAC060N120P1
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 44.5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO247
DAC060N120P1 substitution
DAC060N120P1 Datasheet (PDF)
dac060n120p1.pdf
DAC060N120P1Silicon Carbide Enhancement Mode MOSFETVDSS 1200VPreliminaryFeaturesI 44.5AD(@25 ) RDS(ON) 60m TO-247-3LBenefits
Datasheet: DAC016N120P2 , DAC016N120Z2 , DAC020N065Z1 , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , STP65NF06 , DACMH120N1200 , DACMH160N1200 , DACMH200N1200 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK .
History: CEU01N65
Keywords - DAC060N120P1 MOSFET datasheet
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History: CEU01N65
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