All MOSFET. DACMH120N1200 Datasheet

 

DACMH120N1200 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DACMH120N1200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 170 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 276 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: MODULE

 DACMH120N1200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DACMH120N1200 Datasheet (PDF)

 ..1. Size:564K  dacosemi
 dacmh120n1200.pdf

DACMH120N1200 DACMH120N1200

DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 8.1. Size:539K  dacosemi
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DACMH120N1200 DACMH120N1200

DACMH160N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.1. Size:555K  dacosemi
 dacmh200n1200.pdf

DACMH120N1200 DACMH120N1200

DACMH200N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.2. Size:522K  dacosemi
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DACMH120N1200 DACMH120N1200

DACMH40N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 1200V RDS(ON)

 9.3. Size:527K  dacosemi
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DACMH120N1200 DACMH120N1200

DACMH80N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 3SK135A

 

 
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