All MOSFET. DACMH160N1200 Datasheet

 

DACMH160N1200 Datasheet and Replacement


   Type Designator: DACMH160N1200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 580 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 368 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: MODULE
 

 DACMH160N1200 substitution

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DACMH160N1200 Datasheet (PDF)

 ..1. Size:539K  dacosemi
 dacmh160n1200.pdf pdf_icon

DACMH160N1200

DACMH160N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 8.1. Size:564K  dacosemi
 dacmh120n1200.pdf pdf_icon

DACMH160N1200

DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.1. Size:555K  dacosemi
 dacmh200n1200.pdf pdf_icon

DACMH160N1200

DACMH200N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)

 9.2. Size:522K  dacosemi
 dacmh40n1200.pdf pdf_icon

DACMH160N1200

DACMH40N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 1200V RDS(ON)

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Datasheet: DAC020N065Z1 , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , EMB04N03H , DACMH200N1200 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK .

History: SQ2303ES | DH033N03B | SQ2301ES | FS30KMJ-2 | HSM4103 | CEF18N5 | SFF230

Keywords - DACMH160N1200 MOSFET datasheet

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