DACMH160N1200 Specs and Replacement

Type Designator: DACMH160N1200

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 580 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 368 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: MODULE

DACMH160N1200 substitution

- MOSFET ⓘ Cross-Reference Search

 

DACMH160N1200 datasheet

 ..1. Size:539K  dacosemi
 dacmh160n1200.pdf pdf_icon

DACMH160N1200

DACMH160N1200 DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 1200V RDS(ON) ... See More ⇒

 8.1. Size:564K  dacosemi
 dacmh120n1200.pdf pdf_icon

DACMH160N1200

DACMH120N1200 DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 1200V RDS(ON) ... See More ⇒

 9.1. Size:555K  dacosemi
 dacmh200n1200.pdf pdf_icon

DACMH160N1200

DACMH200N1200 DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 1200V RDS(ON) ... See More ⇒

 9.2. Size:522K  dacosemi
 dacmh40n1200.pdf pdf_icon

DACMH160N1200

DACMH40N1200 DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET Preliminary Features HB-9434 VDSS = 1200V RDS(ON) ... See More ⇒

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Detailed specifications: DAC020N065Z1, DAC021N120Z4, DAC030N120Z1, DAC040N120P2, DAC040N120Z1, DAC040N120Z5, DAC060N120P1, DACMH120N1200, IRLB3034, DACMH200N1200, DACMH40N1200, DACMH80N1200, DACMI060N120BZK, DACMI060N170BZK, DACMI120N120BZK, DACMI150N120BZK3, DACMI180N120BZK

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