DACMH160N1200 Datasheet and Replacement
Type Designator: DACMH160N1200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 580 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 368 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: MODULE
DACMH160N1200 substitution
DACMH160N1200 Datasheet (PDF)
dacmh160n1200.pdf
DACMH160N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh120n1200.pdf
DACMH120N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh200n1200.pdf
DACMH200N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dacmh40n1200.pdf
DACMH40N1200DACO SEMICONDUCTOR CO., LTD.Silicon Carbide Enhancement Mode MOSFETPreliminaryFeaturesHB-9434 VDSS = 1200V RDS(ON)
Datasheet: DAC020N065Z1 , DAC021N120Z4 , DAC030N120Z1 , DAC040N120P2 , DAC040N120Z1 , DAC040N120Z5 , DAC060N120P1 , DACMH120N1200 , 60N06 , DACMH200N1200 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK .
History: AO4566 | SSM2603Y | HUFA75309D3S | UTT6NP10G-S08-R | SIA537EDJ | SHD218513B | QM2N7002E3K1
Keywords - DACMH160N1200 MOSFET datasheet
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History: AO4566 | SSM2603Y | HUFA75309D3S | UTT6NP10G-S08-R | SIA537EDJ | SHD218513B | QM2N7002E3K1
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