DACMI060N120BZK Specs and Replacement

Type Designator: DACMI060N120BZK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 326 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOT227

DACMI060N120BZK substitution

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DACMI060N120BZK datasheet

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 dacmi060n120bzk.pdf pdf_icon

DACMI060N120BZK

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DACMI060N120BZK

DACMI060N170BZK DACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET Features S G S D Appl... See More ⇒

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DACMI060N120BZK

DACMI450N120BZK3 Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Typ. 5 m @ VGS = 15V Fully Avalanche Rated S D G Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Dimensions in inches and (millimeters) Electrically Isolation base plate Applications Solar Inverters Sw... See More ⇒

 9.2. Size:1581K  dacosemi
 dacmi150n120bzk3.pdf pdf_icon

DACMI060N120BZK

DACMI150N120BZK3 Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy. 14 m @ VGS = 15V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters S... See More ⇒

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Detailed specifications: DAC040N120Z1, DAC040N120Z5, DAC060N120P1, DACMH120N1200, DACMH160N1200, DACMH200N1200, DACMH40N1200, DACMH80N1200, K2611, DACMI060N170BZK, DACMI120N120BZK, DACMI150N120BZK3, DACMI180N120BZK, DACMI240N120BZK, DACMI250N120BZK3, DACMI450N120BZK3, DADMH040N120Z1B

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