Справочник MOSFET. DACMI060N120BZK

 

DACMI060N120BZK MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: DACMI060N120BZK
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 326 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 145 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm
   Тип корпуса: SOT227

 Аналог (замена) для DACMI060N120BZK

 

 

DACMI060N120BZK Datasheet (PDF)

 0.1. Size:457K  dacosemi
 dacmi060n120bzk.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI060N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227PreliminaryFeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 40 m@ V GS = 20 V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters

 4.1. Size:383K  dacosemi
 dacmi060n170bzk.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI060N170BZKDACO SEMICONDUCTOR CO., LTD. Silicon Carbide Enhancement Mode MOSFET FeaturesSG SD Appl

 9.1. Size:385K  dacosemi
 dacmi450n120bzk3.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI450N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Typ. 5 m@ VGS = 15V Fully Avalanche Rated SDG Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Dimensions in inches and (millimeters) Electrically Isolation base plateApplications Solar Inverters Sw

 9.2. Size:1581K  dacosemi
 dacmi150n120bzk3.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI150N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 14 m@ VGS = 15V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters S

 9.3. Size:396K  dacosemi
 dacmi180n120bzk.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI180N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.16 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi

 9.4. Size:400K  dacosemi
 dacmi240n120bzk.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI240N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.10 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi

 9.5. Size:782K  dacosemi
 dacmi120n120bzk.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI120N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227FeaturesKSG VDSS = 1200VD RDS(ON)

 9.6. Size:386K  dacosemi
 dacmi250n120bzk3.pdf

DACMI060N120BZK DACMI060N120BZK

DACMI250N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.13 m@ V = 15 VGS Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters

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