DACMI120N120BZK Specs and Replacement
Type Designator: DACMI120N120BZK
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 72 nS
Cossⓘ - Output Capacitance: 363 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOT227
DACMI120N120BZK substitution
- MOSFET ⓘ Cross-Reference Search
DACMI120N120BZK datasheet
dacmi120n120bzk.pdf
DACMI120N120BZK Silicon Carbide Enhancement Mode MOSFET SOT-227 Features KS G VDSS = 1200V D RDS(ON) ... See More ⇒
dacmi150n120bzk3.pdf
DACMI150N120BZK3 Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy. 14 m @ VGS = 15V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters S... See More ⇒
dacmi180n120bzk.pdf
DACMI180N120BZK Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy.16 m @ VGS = 18V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters Swi... See More ⇒
Detailed specifications: DAC060N120P1, DACMH120N1200, DACMH160N1200, DACMH200N1200, DACMH40N1200, DACMH80N1200, DACMI060N120BZK, DACMI060N170BZK, RU7088R, DACMI150N120BZK3, DACMI180N120BZK, DACMI240N120BZK, DACMI250N120BZK3, DACMI450N120BZK3, DADMH040N120Z1B, DADMH056N090Z1B, DADMI040N120Z1B
Keywords - DACMI120N120BZK MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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