DACMI150N120BZK3 Specs and Replacement
Type Designator: DACMI150N120BZK3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOT227
DACMI150N120BZK3 substitution
- MOSFET ⓘ Cross-Reference Search
DACMI150N120BZK3 datasheet
dacmi150n120bzk3.pdf
DACMI150N120BZK3 Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy. 14 m @ VGS = 15V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters S... See More ⇒
dacmi180n120bzk.pdf
DACMI180N120BZK Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy.16 m @ VGS = 18V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters Swi... See More ⇒
dacmi120n120bzk.pdf
DACMI120N120BZK Silicon Carbide Enhancement Mode MOSFET SOT-227 Features KS G VDSS = 1200V D RDS(ON) ... See More ⇒
Detailed specifications: DACMH120N1200, DACMH160N1200, DACMH200N1200, DACMH40N1200, DACMH80N1200, DACMI060N120BZK, DACMI060N170BZK, DACMI120N120BZK, MMIS60R580P, DACMI180N120BZK, DACMI240N120BZK, DACMI250N120BZK3, DACMI450N120BZK3, DADMH040N120Z1B, DADMH056N090Z1B, DADMI040N120Z1B, DADMI056N090Z1B
Keywords - DACMI150N120BZK3 MOSFET specs
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