DACMI180N120BZK Specs and Replacement

Type Designator: DACMI180N120BZK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 800 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 375 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOT227

DACMI180N120BZK substitution

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DACMI180N120BZK datasheet

 0.1. Size:396K  dacosemi
 dacmi180n120bzk.pdf pdf_icon

DACMI180N120BZK

DACMI180N120BZK Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy.16 m @ VGS = 18V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters Swi... See More ⇒

 8.1. Size:1581K  dacosemi
 dacmi150n120bzk3.pdf pdf_icon

DACMI180N120BZK

DACMI150N120BZK3 Silicon Carbide Enhancement Mode MOSFET Preliminary SOT-227 Features KS G VDSS = 1200V D RDS(ON) Tpy. 14 m @ VGS = 15V Fully Avalanche Rated S G D Pb Free & RoHS Compliant KS (Kelvin Source) Isolation Type Package S Electrically Isolation base plate Dimensions in inches and (millimeters) Applications Solar Inverters S... See More ⇒

 8.2. Size:782K  dacosemi
 dacmi120n120bzk.pdf pdf_icon

DACMI180N120BZK

DACMI120N120BZK Silicon Carbide Enhancement Mode MOSFET SOT-227 Features KS G VDSS = 1200V D RDS(ON) ... See More ⇒

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Detailed specifications: DACMH160N1200, DACMH200N1200, DACMH40N1200, DACMH80N1200, DACMI060N120BZK, DACMI060N170BZK, DACMI120N120BZK, DACMI150N120BZK3, AOD4184A, DACMI240N120BZK, DACMI250N120BZK3, DACMI450N120BZK3, DADMH040N120Z1B, DADMH056N090Z1B, DADMI040N120Z1B, DADMI056N090Z1B, DAEMI040N120Z1B

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