DACMI180N120BZK Datasheet and Replacement
Type Designator: DACMI180N120BZK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 800 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 59 nS
Cossⓘ - Output Capacitance: 375 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOT227
DACMI180N120BZK substitution
DACMI180N120BZK Datasheet (PDF)
dacmi180n120bzk.pdf
DACMI180N120BZKSilicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy.16 m@ VGS = 18V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters Swi
dacmi150n120bzk3.pdf
DACMI150N120BZK3Silicon Carbide Enhancement Mode MOSFETPreliminarySOT-227FeaturesKSG VDSS = 1200VD RDS(ON) Tpy. 14 m@ VGS = 15V Fully Avalanche Rated SG D Pb Free & RoHS Compliant KS(Kelvin Source) Isolation Type PackageS Electrically Isolation base plateDimensions in inches and (millimeters)Applications Solar Inverters S
dacmi120n120bzk.pdf
DACMI120N120BZKSilicon Carbide Enhancement Mode MOSFETSOT-227FeaturesKSG VDSS = 1200VD RDS(ON)
Datasheet: DACMH160N1200 , DACMH200N1200 , DACMH40N1200 , DACMH80N1200 , DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , HY1906P , DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 , DADMH040N120Z1B , DADMH056N090Z1B , DADMI040N120Z1B , DADMI056N090Z1B , DAEMI040N120Z1B .
History: SI2311DS | AFN04N60T220FT | NCE65N760F | TSM1N60LCH | SIHF9520 | IXFT50N30Q3 | SPA12N50C3
Keywords - DACMI180N120BZK MOSFET datasheet
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History: SI2311DS | AFN04N60T220FT | NCE65N760F | TSM1N60LCH | SIHF9520 | IXFT50N30Q3 | SPA12N50C3
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