DADMH040N120Z1B Specs and Replacement

Type Designator: DADMH040N120Z1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1000 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 44 nS

Cossⓘ - Output Capacitance: 1390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.322 Ohm

Package: MODULE

DADMH040N120Z1B substitution

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DADMH040N120Z1B datasheet

 0.1. Size:478K  dacosemi
 dadmh040n120z1b.pdf pdf_icon

DADMH040N120Z1B

DADMH040N120Z1B T DACO SEMICONDUC OR CO., LTD. N-Channel Enhancement Mode Power MOSFET 1200V / 40A Preliminary HB-9434 Features VDSS = 1200V RDS(ON) ... See More ⇒

 8.1. Size:478K  dacosemi
 dadmh056n090z1b.pdf pdf_icon

DADMH040N120Z1B

DADMH056N090Z1B T DACO SEMICONDUC OR CO., LTD. N-Channel Enhancement Mode Power MOSFET 900V / 56A Preliminary HB-9434 Features VDSS = 900V RDS(ON) ... See More ⇒

Detailed specifications: DACMI060N120BZK, DACMI060N170BZK, DACMI120N120BZK, DACMI150N120BZK3, DACMI180N120BZK, DACMI240N120BZK, DACMI250N120BZK3, DACMI450N120BZK3, AO4468, DADMH056N090Z1B, DADMI040N120Z1B, DADMI056N090Z1B, DAEMI040N120Z1B, DAEMI056N090Z1B, DAMH160N200, DAMH220N150, DAMH220N200

Keywords - DADMH040N120Z1B MOSFET specs

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