DADMH040N120Z1B Datasheet and Replacement
Type Designator: DADMH040N120Z1B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1000 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 1390 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.322 Ohm
Package: MODULE
DADMH040N120Z1B substitution
DADMH040N120Z1B Datasheet (PDF)
dadmh040n120z1b.pdf
DADMH040N120Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 1200V / 40APreliminaryHB-9434Features VDSS = 1200V RDS(ON)
dadmh056n090z1b.pdf
DADMH056N090Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 900V / 56APreliminaryHB-9434Features VDSS = 900V RDS(ON)
Datasheet: DACMI060N120BZK , DACMI060N170BZK , DACMI120N120BZK , DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 , IRFP064N , DADMH056N090Z1B , DADMI040N120Z1B , DADMI056N090Z1B , DAEMI040N120Z1B , DAEMI056N090Z1B , DAMH160N200 , DAMH220N150 , DAMH220N200 .
History: NTLJF3117PTAG | MIC94052BC6TR | NVMFS5C406N | GSM9435WS | IPP65R660CFD | BRD7002K2 | EFC4612R
Keywords - DADMH040N120Z1B MOSFET datasheet
DADMH040N120Z1B cross reference
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DADMH040N120Z1B replacement
History: NTLJF3117PTAG | MIC94052BC6TR | NVMFS5C406N | GSM9435WS | IPP65R660CFD | BRD7002K2 | EFC4612R
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