All MOSFET. DADMI056N090Z1B Datasheet

 

DADMI056N090Z1B Datasheet and Replacement


   Type Designator: DADMI056N090Z1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 6.5 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 148 nC
   tr ⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 1194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm
   Package: SOT227
 

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DADMI056N090Z1B Datasheet (PDF)

 0.1. Size:484K  dacosemi
 dadmi056n090z1b.pdf pdf_icon

DADMI056N090Z1B

DADMI056N090Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 900V / 56ASOT-227PreliminarySFeaturesG VDSS = 900V RDS(ON)

 8.1. Size:483K  dacosemi
 dadmi040n120z1b.pdf pdf_icon

DADMI056N090Z1B

DADMI040N120Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 1200V / 40APreliminary SOT-227FeaturesSG VDSS = 1200V RDS(ON)

Datasheet: DACMI150N120BZK3 , DACMI180N120BZK , DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 , DADMH040N120Z1B , DADMH056N090Z1B , DADMI040N120Z1B , IRF3205 , DAEMI040N120Z1B , DAEMI056N090Z1B , DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , DAMH300N150 , DAMH320N100 .

History: DACMI240N120BZK

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