DADMI056N090Z1B Specs and Replacement

Type Designator: DADMI056N090Z1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1000 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.2 nS

Cossⓘ - Output Capacitance: 1194 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm

Package: SOT227

DADMI056N090Z1B substitution

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DADMI056N090Z1B datasheet

 0.1. Size:484K  dacosemi
 dadmi056n090z1b.pdf pdf_icon

DADMI056N090Z1B

DADMI056N090Z1B T DACO SEMICONDUC OR CO., LTD. N-Channel Enhancement Mode Power MOSFET 900V / 56A SOT-227 Preliminary S Features G VDSS = 900V RDS(ON) ... See More ⇒

 8.1. Size:483K  dacosemi
 dadmi040n120z1b.pdf pdf_icon

DADMI056N090Z1B

DADMI040N120Z1B T DACO SEMICONDUC OR CO., LTD. N-Channel Enhancement Mode Power MOSFET 1200V / 40A Preliminary SOT-227 Features S G VDSS = 1200V RDS(ON) ... See More ⇒

Detailed specifications: DACMI150N120BZK3, DACMI180N120BZK, DACMI240N120BZK, DACMI250N120BZK3, DACMI450N120BZK3, DADMH040N120Z1B, DADMH056N090Z1B, DADMI040N120Z1B, IRF3205, DAEMI040N120Z1B, DAEMI056N090Z1B, DAMH160N200, DAMH220N150, DAMH220N200, DAMH280N200, DAMH300N150, DAMH320N100

Keywords - DADMI056N090Z1B MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs