All MOSFET. DAEMI056N090Z1B Datasheet

 

DAEMI056N090Z1B Datasheet and Replacement


   Type Designator: DAEMI056N090Z1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1000 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.2 nS
   Cossⓘ - Output Capacitance: 1194 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.146 Ohm
   Package: SOT227
 

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DAEMI056N090Z1B Datasheet (PDF)

 0.1. Size:464K  dacosemi
 daemi056n090z1b.pdf pdf_icon

DAEMI056N090Z1B

DAEMI056N090Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 900V / 56ASOT-227PreliminaryFeaturesSG VDSS = 900V RDS(ON)

 8.1. Size:462K  dacosemi
 daemi040n120z1b.pdf pdf_icon

DAEMI056N090Z1B

DAEMI040N120Z1BTDACO SEMICONDUC OR CO., LTD.N-Channel Enhancement ModePower MOSFET 1200V / 40APreliminary SOT-227FeaturesSG VDSS = 1200V RDS(ON)

Datasheet: DACMI240N120BZK , DACMI250N120BZK3 , DACMI450N120BZK3 , DADMH040N120Z1B , DADMH056N090Z1B , DADMI040N120Z1B , DADMI056N090Z1B , DAEMI040N120Z1B , 20N60 , DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , DAMH300N150 , DAMH320N100 , DAMH360N150 , DAMH450N100 .

History: IXFH9N80Q

Keywords - DAEMI056N090Z1B MOSFET datasheet

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