DAMH160N200 Specs and Replacement

Type Designator: DAMH160N200

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 440 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 671 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm

Package: MODULE

DAMH160N200 substitution

- MOSFET ⓘ Cross-Reference Search

 

DAMH160N200 datasheet

 ..1. Size:281K  dacosemi
 damh160n200.pdf pdf_icon

DAMH160N200

DAMH160N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary Features HB-9434 VDSS = 200V RDS(ON) ... See More ⇒

Detailed specifications: DACMI250N120BZK3, DACMI450N120BZK3, DADMH040N120Z1B, DADMH056N090Z1B, DADMI040N120Z1B, DADMI056N090Z1B, DAEMI040N120Z1B, DAEMI056N090Z1B, 20N60, DAMH220N150, DAMH220N200, DAMH280N200, DAMH300N150, DAMH320N100, DAMH360N150, DAMH450N100, DAMH50N500H

Keywords - DAMH160N200 MOSFET specs

 DAMH160N200 cross reference

 DAMH160N200 equivalent finder

 DAMH160N200 pdf lookup

 DAMH160N200 substitution

 DAMH160N200 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.