DAMH320N100 Datasheet and Replacement
Type Designator: DAMH320N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 424 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 1424 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: MODULE
DAMH320N100 substitution
DAMH320N100 Datasheet (PDF)
damh320n100.pdf
DAMH320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 100V RDS(ON)
damh300n150.pdf
DAMH300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 150V RDS(ON)
damh360n150.pdf
DAMH360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeatures HB-9434 VDSS = 150V RDS(ON)
Datasheet: DADMI056N090Z1B , DAEMI040N120Z1B , DAEMI056N090Z1B , DAMH160N200 , DAMH220N150 , DAMH220N200 , DAMH280N200 , DAMH300N150 , IRFZ44 , DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 .
History: AM40N20-180P | 2SK1928 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B | AUIRFP4227
Keywords - DAMH320N100 MOSFET datasheet
DAMH320N100 cross reference
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History: AM40N20-180P | 2SK1928 | VBZE04N03 | SSM3K56CT | IXTJ3N150 | AM90N06-04M2B | AUIRFP4227
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