DAMI360N150 Datasheet and Replacement
Type Designator: DAMI360N150
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 600 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 360 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 42 nS
Cossⓘ - Output Capacitance: 1600 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
Package: SOT227
- MOSFET Cross-Reference Search
DAMI360N150 Datasheet (PDF)
dami360n150.pdf
DAMI360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesSG VDSS = 150V RDS(ON)
dami320n100.pdf
DAMI320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)
dami330n60.pdf
DAMI330N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)
dami300n150.pdf
DAMI300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 150V G RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXTH40N50L2 | IXFE48N50QD2 | 2SJ200 | 2N6790JANTXV | 2SJ138 | DH100P18B | NCEP40PT15D
Keywords - DAMI360N150 MOSFET datasheet
DAMI360N150 cross reference
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History: IXTH40N50L2 | IXFE48N50QD2 | 2SJ200 | 2N6790JANTXV | 2SJ138 | DH100P18B | NCEP40PT15D
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