DAMI450N100 Datasheet. Specs and Replacement

Type Designator: DAMI450N100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 626 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 450 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 2136 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: SOT227

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DAMI450N100 datasheet

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DAMI450N100

DAMI450N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET SOT-227 Preliminary Features S G VDSS = 100V RDS(ON) ... See More ⇒

Detailed specifications: DAMI160N200, DAMI220N150, DAMI220N200, DAMI280N200, DAMI300N150, DAMI320N100, DAMI330N60, DAMI360N150, IRF9540, DAMI500N60, DAMI560N100, DAMI660N60, DAMIA1100N100, P0165ED, P0165EI, P0260EDA, P0260EIA

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