DAMI500N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: DAMI500N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id|ⓘ - Maximum Drain Current: 500 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 879 nC
trⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 4083 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
Package: SOT227
DAMI500N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DAMI500N60 Datasheet (PDF)
dami500n60.pdf
DAMI500N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)
dami560n100.pdf
DAMI560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100