DAMI500N60 Datasheet and Replacement
Type Designator: DAMI500N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 500 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 220 nS
Cossⓘ - Output Capacitance: 4083 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
Package: SOT227
DAMI500N60 substitution
DAMI500N60 Datasheet (PDF)
dami500n60.pdf
DAMI500N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)
dami560n100.pdf
DAMI560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)
Datasheet: DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , STP75NF75 , DAMI560N100 , DAMI660N60 , DAMIA1100N100 , P0165ED , P0165EI , P0260EDA , P0260EIA , P0306BT .
History: ME2325 | MTP3055V | OSG60R380AF | TPCA8027-H | IXFH170N10P | SSF2610E | AP4P016P
Keywords - DAMI500N60 MOSFET datasheet
DAMI500N60 cross reference
DAMI500N60 equivalent finder
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History: ME2325 | MTP3055V | OSG60R380AF | TPCA8027-H | IXFH170N10P | SSF2610E | AP4P016P
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