All MOSFET. DAMI500N60 Datasheet

 

DAMI500N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DAMI500N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 500 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 220 nS
   Cossⓘ - Output Capacitance: 4083 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: SOT227

 DAMI500N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAMI500N60 Datasheet (PDF)

 ..1. Size:504K  dacosemi
 dami500n60.pdf

DAMI500N60 DAMI500N60

DAMI500N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)

 9.1. Size:966K  dacosemi
 dami560n100.pdf

DAMI500N60 DAMI500N60

DAMI560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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