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DAMI660N60 Spec and Replacement


   Type Designator: DAMI660N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 660 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 330 nS
   Cossⓘ - Output Capacitance: 5400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: SOT227

 DAMI660N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAMI660N60 Specs

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DAMI660N60

DAMI660N60 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Features Preliminary SOT-227 VDSS = 60V S G RDS(ON) ... See More ⇒

Detailed specifications: DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , IRF630 , DAMIA1100N100 , P0165ED , P0165EI , P0260EDA , P0260EIA , P0306BT , P0406AK , P0460EDA .

History: HD830U | FDBL86361F085

Keywords - DAMI660N60 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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