DAMI660N60 Datasheet. Specs and Replacement
Type Designator: DAMI660N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 660 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 330 nS
Cossⓘ - Output Capacitance: 5400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
Package: SOT227
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DAMI660N60 substitution
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DAMI660N60 datasheet
dami660n60.pdf
DAMI660N60 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Features Preliminary SOT-227 VDSS = 60V S G RDS(ON) ... See More ⇒
Detailed specifications: DAMI280N200, DAMI300N150, DAMI320N100, DAMI330N60, DAMI360N150, DAMI450N100, DAMI500N60, DAMI560N100, IRF630, DAMIA1100N100, P0165ED, P0165EI, P0260EDA, P0260EIA, P0306BT, P0406AK, P0460EDA
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
