DAMI660N60 MOSFET. Datasheet pdf. Equivalent

   Type Designator: DAMI660N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 660 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 980 nC
   trⓘ - Rise Time: 330 nS
   Cossⓘ - Output Capacitance: 5400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001 Ohm
   Package: SOT227

DAMI660N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search